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Volumn 25, Issue 1-2, 1999, Pages 351-355

Tight-binding design of intersubband transitions in InGaAs/AlAs quantum heterostructures grown pseudomorphically on InP

Author keywords

InGaAs AlAs quantum wells; Intersubband transitions; Tight binding method

Indexed keywords


EID: 0002232730     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1998.0657     Document Type: Article
Times cited : (1)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.