Very compact wideband HBT MMIC VCO with two-output buffer amplifier

Electronics Letters

Volumn 30, Issue 5, 1994, Pages 420-422

  Plouchart, J O ^a   Wang, H ^a   Riet, M ^a   Berdaguer, P ^a  

^a ORANGE LABS   (France)

Author keywords

Heterojunction bipolar transistors; MMIC; Voltage controlled oscillators

Indexed keywords

BIPOLAR TRANSISTORS; BUFFER AMPLIFIERS; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK SYNTHESIS; HETEROJUNCTIONS; INTEGRATED CIRCUIT LAYOUT; MOBILE TELECOMMUNICATION SYSTEMS; OPTIMIZATION; TELECOMMUNICATION EQUIPMENT;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; TWO OUTPUT BUFFER AMPLIFIERS;

VARIABLE FREQUENCY OSCILLATORS;

EID: 0028762691     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19940278     Document Type: Article

References (4)

1. WANG, N.L., and HO, W.J.: ‘X-band HBT VCO with high-efficiency CE buffer amplifier’, IEEE J. Solid-State Circuits, 1992, SC-27, (10), pp. 1439–1443
2. YAMAUCHI, Y., and KAMITSUNA, H.: ‘A 15 GHz monolithic low phase-noise VCO using AlGaAs/GaAs HBT technology’, IEEE J. Solid-State Circuits. 1992, SC-27, (10), pp. 1444–1447
3. 0.01As heterojunction bipolar transistor grown by molectilar beam epitaxy’, IEEE Electron. Device Lett., 1986, 7, (2), pp. 129–131
4. WANG, H., ALGANI, C., KONCZYKOWSKA, A., and ZUBEREK, W.: ‘Temperature dependence of DC currents in HBT’. 1992, IEEE Int. Microwave Symp. MTT-S