Diffusion and electrical activation after a rapid thermal annealing of an as and B-co-implanted polysilicon layer

Journal de Physique III

Volumn 7, Issue 1, 1997, Pages 47-58

  Gontrand, C ^a,b,c,d   Sellitto, P ^a,b,c,d   Tabikh, S ^a,b,c,d   Latreche, S ^a,b,c,d   Kaminski, A ^a,b,c,d  

^a UNIVERSITÉ DE LYON   (France)

^b CIMIRLY Centre Interuniversitaire de Microélectronique de la Région Lyonnaise   (France)

^c UNIVERSITÉ MONTPELLIER 2   (France)

^d UNIVERSITÉ DES ANTILLES ET DE LA GUYANE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; BORON; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; ELECTRIC RESISTANCE MEASUREMENT; HALL EFFECT; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON;

DOPANTS; ELECTRICAL ACTIVATION; POLYSILICON;

SEMICONDUCTING FILMS;

EID: 0030834930     PISSN: 11554320     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp3:1997109     Document Type: Article

References (13)

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