Analysis of the Transition Layer in Silicon Nitride Films Deposited by a Low-pressure Chemical Vapour Deposition

Surface and Interface Analysis

Volumn 27, Issue 7, 1999, Pages 638-643

  Tanaka, Koki ^a   Tsuge, Atsuko ^a   Takiyama, Makoto ^a   Shimizu, Ryuichi ^b  

^a NIPPON STEEL CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Angle resolved; RBS; Si; Silicon nitride; XPS

Indexed keywords

EID: 0001718459     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1096-9918(199907)27:7<638::aid-sia552>3.0.co;2-%23     Document Type: Article

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