Magnetoresistance of ferromagnetic tunnel junctions with Al2O3 barriers formed by rf sputter etching in Ar/O2 plasma

Applied Physics Letters

Volumn 73, Issue 5, 1998, Pages 698-700

  Nassar, J ^a   Hehn, M ^a   Vaures A ^a   Petroff, F ^a   Fert, A ^a  

^a INSTITUT D'OPTIQUE GRADUATE SCHOOL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001658247     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121952     Document Type: Article

References (8)

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