Ellipsometric characterization of amorphous and polycrystalline silicon films deposited using a single wafer reactor

Applied Physics Letters

Volumn 70, Issue 7, 1997, Pages 892-894

  Borghesi, A ^a,b   Giardini, M E ^b,c   Marazzi, M ^b,c   Sassella, A ^b,d   De Santi, G ^e  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b INFM   (Italy)

^c UNIVERSITY OF PAVIA   (Italy)

^d UNIVERSITY OF MILAN   (Italy)

^e STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001631863     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118306     Document Type: Article

References (10)

1. D. E. Aspnes, in Handbook of Optical Constants of Solids, edited by E. D. Palik (Academic, Orlando, 1985), p. 89.
2. L. M. Asinovsky, Thin Solid Films 233, 210 (1993).
3. F. Hottier and R. Cadoret, J. Cryst. Growth 56, 304 (1982).
4. G. E. Jellison, Jr., M. F. Chisholm, and S. M. Gorbatkin, Appl. Phys. Lett. 62, 3348 (1993).
5. Y. Z. Hu, D. J. Diehl, C. Y. Zhao, C. L. Wang, Q. Liu, E. A. Irene, K. N. Christensen, D. Venable, and D. M. Maher, J. Vac. Sci. Technol. B 14, 744 (1996).
6. D. A. G. Bruggeman, Ann. Phys. (Leipzig) 24, 636 (1935).
7. G. E. Jellison, Jr., Opt. Mater. 1, 41 (1992).
8. See for example, P. R. Bevington, Data Reduction and Error Analysis for the Physical Sciences (McGraw-Hill, New York, 1969).
9. A. Daunois and D. E. Aspnes, Phys. Rev. B 18, 1824 (1978).
10. P. Lautenschlager, M. Garriga, L. Viña, and M. Cardona, Phys. Rev. B 36, 4821 (1987).