STM and Raman study of the evolution of the surface morphology in μc-Si:H

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 863-866

  Ikuta, Kazuyuki ^a,b,d   Toyoshima, Yasutake ^c   Yamasaki, Satoshi ^a   Matsuda, Akihisa ^c   Tanaka, Kazunobu ^a,b  

^a NATL INST FOR ADV INTERDISC RES   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

^d JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL STRUCTURE; DEPOSITION; GRAPHITE; MORPHOLOGY; NANOSTRUCTURED MATERIALS; RAMAN SCATTERING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE ROUGHNESS;

CHEMICALLY ACTIVE SITE; CRYSTALLOGRAPHIC ANISOTROPY; FILM THICKNESS DEPENDENCE; GRAPHITE RAMAN BANDS; HYDROGENATED MICROCRYSTALLINE SILICON;

SEMICONDUCTING FILMS;

EID: 17344384926     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00071-3     Document Type: Article

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