AlGaAs/InGaAs/GaAs single electron transistors fabricated by Ga focused ion beam implantation

Applied Physics Letters

Volumn 64, Issue 17, 1994, Pages 2250-2252

  Fujisawa, Toshimasa ^a   Hirayama, Yoshiro ^a   Tarucha, Seigo ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009317764     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.111634     Document Type: Article

References (9)