Advanced surface modification resist process for arf lithography

Journal of Photopolymer Science and Technology

Volumn 11, Issue 4, 1998, Pages 645-650

  Matsuo, Takahiro ^a,b   Endo, Masayuki ^a   Mori, Shigeyasu ^a   Kuhara, Koichi ^a   Sasago, Masaru ^a   Shirai, Masamitsu ^a   Tsunooka, Masahiro ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b Osaka Prefecture University   (Japan)

Author keywords

Arf lithography; Polarity change; Polysiloxane; Surface modification

Indexed keywords

EID: 0001416667     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.11.645     Document Type: Article

References (9)

1. K. Maeda, T. Ohfuji, N. Aizaki and E. Hasegawa, Proc. SPIE, 2438, (1995) 465.
2. S. Mori, K. Kuhara, T. Ohfuji and M. Sasago, Proc.SPIE, 3049, (1997) 146.
3. M. Shirai, M. Hayashi and M. Tsunooka, Macromolecules, 25, (1992) 195.
4. T. Matsuo, M. Endo, M. Shirai and M. Tsunooka, J. Vac. Sci. Technol.,B14(6), (1996) 4212.
5. T. Matsuo, M. Endo, M. Shirai and M. Tsunooka, J. Photopolym. Sci. Technol., 10, (1997) 595.
6. T. Matsuo, M. Endo, S. Mori, K. Kuhara, M. Sasago, M. Shirai and M. Tsunooka, Proc. SPIE, 3333, (1998) in press.
7. J. Sanchez and A. McCormick, Chemical Processing of Advanced Materials, L. L. Hench and J. K. West, Ed., John Wiley and Sons, New York (1992) p. 43.
8. A. McCormick, Sol-Gel Processing and Applications, Y. A. Attia, Ed., Plenum Press, New York (1994) p. 3.
9. T. Matsuo, M. Endo, M. Shirai and M. Tsunooka, J. Electrochem. Soc., 144 (1997) 2903.