Universality of the bond-breaking mechanism in defect bistability: Observation of open volume in the deep states of in and Ga in CdF2

Physical Review Letters

Volumn 82, Issue 16, 1999, Pages 3276-3279

  Nissila J ^a   Saarinen, K ^a   Hautojarvi P ^a   Suchocki, A ^b   Langer, J M ^b  

^a AALTO UNIVERSITY   (Finland)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001388485     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.82.3276     Document Type: Article

References (30)

1. P. M. Mooney, J. Appl. Phys., 67, R1 (1990).
2. U. Piekara, J. M. Langer, and B. Krukowska-Fulde, Solid State Commun., 23, 583 (1977);
3. J. E. Dmochowski, J. M. Langer, and Z. Kalinski, Phys. Rev. Lett., 56, 1735 (1986);
4. J. E. Dmochowski, W. Jantsch, D. Dobosz, and J. M. Langer, Acta Phys. Pol. A, 73, 247 (1988).
5. J. M. Langer, in Reviews of Solid State Science (World Scientific, Singapore, 1990), Vol. 4, p. 297.
6. D. J. Chadi and K. J. Chang, Phys. Rev. Lett., 61, 873 (1988).
7. J. M. Langer, J. Phys. Soc. Jpn. Suppl., 49A, 207 (1980);
8. J. M. Langer Radiat. Eff., 72, 55 (1983);
9. J. M. Langer Inst. Phys. Conf. Ser., 135, 197 (1994).
10. Y. Cai and K. S. Song, J. Phys. Condens. Matter, 7, 2275 (1995);
11. C. Fu and K. S. Song J. Phys. Condens. Matter., 9, 3575 (1997).
12. A. I. Ryskin, et al., Appl. Phys. Lett., 67, 31 (1995);
13. R. A. Linke, I. Redmond, T. Thio, and D. J. Chadi, J. Appl. Phys., 83, 661 (1998).
14. A. Suchocki, B. Koziarska, T. Langer, and J. M. Langer, Appl. Phys. Lett., 70, 2934 (1997);
15. B. Koziarska-Glinka, J. M. Langer, A. Suchocki, and L. Arizmendi, Opt. Mater., 10, 313 (1998).
16. A. S. Shcheulin, A. I. Ryskin, K. Swiatek, and J. M. Langer, Phys. Lett. A, 222, 107 (1996);
17. A. I. Ryskin, A. S. Shcheulin, and D. E. Onopko, Phys. Rev. Lett., 80, 2949 (1998).
18. J. M. Langer, A. Suchocki, R. Szymczak, and M. Baran, in Defects in Semiconductors, G. Davies and M. H. Nazare, Materials Science Forum Vols. 258–263 (Trans Tech Publications, Switzerland, 1997), p. 1449;
19. S. A. Kazanskii, A. I. Ryskin, and V. V. Romanov, Appl. Phys. Lett., 70, 1272 (1997).
20. A. Suchocki, J. Rauluszkiewicz, and J. M. Langer, Appl. Phys. Lett., 71, 1552 (1997).
21. T. Mattila, S. Pöykkö, and R. M. Nieminen, Phys. Rev. B, 56, 15 665 (1997).
22. C. H. Park and D. J. Chadi, Phys. Rev. Lett., 82, 113 (1999).
23. K. Saarinen, P. Hautojärvi, and C. Corbel, in Identification of Defects in Semiconductors, M. Stavola (Academic, New York, 1998), p. 209.
24. M. J. Puska and R. M. Nieminen, Rev. Mod. Phys., 66, 841 (1994).
25. R. Krause, et al., Phys. Rev. Lett., 65, 3329 (1990).
26. J. Mäkinen, et al., Phys. Rev. Lett., 71, 3154 (1993).
27. S. Kuisma, et al., Phys. Rev. B, 53, 9814 (1996).
28. M. J. Puska (unpublished);
29. B. Barbiellini, et al., Phys. Rev. B, 51, 7341 (1995);
30. B. Barbiellini, et al Phys. Rev. B 53, 16 201 (1996).