Dynamic dc voltage band observed within each current branch in the transition from static to dynamic electric-field domain formation in a doped GaAs/AlAs superlattice

Applied Physics Letters

Volumn 75, Issue 17, 1999, Pages 2620-2622

  Wang, Jiannong ^a   Sun, Baoquan ^a,b   Wang, Xiangrong ^a   Wang, Yuqi ^a   Ge, Wekun ^a   Wang, Hailong ^b  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001374133     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125097     Document Type: Article

References (13)

1. The applied electric-field distribution across the superlattice is not uniform and is broken up into different regions, which are called electric-field domains. Static electric-field domain formation corresponds to the stable domain boundary, while dynamic electric-field domain formation corresponds to the unstable domain boundary.
2. R. Merlin, S. H. Kwok, T. B. Norris, H. T. Grahn, K. Ploog, L. L. Bonilla, J. Galan, J. A. Cuesta, F. C. Martinez, and J. Moleara, in Proceedings of the 22nd International Conference on the Physics of Semiconductors, edited by D. J. Lockwood (World Scientific, Singapore, 1995), Vol. 2, p. 1039.
3. H. T. Grahn, J. Kastrap, K. Ploog, L. L. Bonilla, J. Galan, M. Kindelan, and M. Moscoso. Jpn. J. Appl. Phys., Part 1 34, 4526 (1995).
4. B. Sun, D. Jiang, and X. Wang, Semicond. Sci. Technol. 12, 401 (1997).
5. J. Kastrup, R. Hey, K. H. Ploog, H. T. Grahn, L. L. Bonilla, M. Kindelan, M. Moscoso, A. Wacker, and J. Galan, Phys. Rev. B 55, 2476 (1997).
6. N. Ohtani, N. Egami, H. T. Grahn, K. Ploog, and L. L. Bonilla, Phys. Rev. B 58, R7528 (1998).
7. L. L. Chang, L. Esaki, and R. Tsu, Appl. Phys. Lett. 24, 593 (1974); L. Esaki and L. L. Chang, Phys. Rev. Lett. 8, 496 (1974).
8. L. L. Chang, L. Esaki, and R. Tsu, Appl. Phys. Lett. 24, 593 (1974); L. Esaki and L. L. Chang, Phys. Rev. Lett. 8, 496 (1974).
9. H. T. Grahn, R. J. Hang, W. Muller, and K. Ploog, Phys. Rev. Lett. 67, 1618 (1991).
10. J. Wang, B. Sun, X. Wang, and H. Wang, Solid State Commun. (in press).
11. Negative differential resistance means the current decreases as applied voltage increases.
12. X. R. Wang and Q. Niu, Phys. Rev. B 59, R12755 (1999).
13. The dynamic voltage bandwidth is defined as the voltage range in which the current oscillates with time at a fixed dc bias.