Evidence for ballistic electron transport exceeding 160 μm in an undoped (formula presented) field-effect transistor

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 7, 1999, Pages 4622-4625

  Pfeiffer, L N ^b   West, K W ^b   Dzurak, A S ^a   Heron, R J ^a   Lumpkin, N E ^a   Clark, R G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001370032     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.4622     Document Type: Article

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