Electronic properties of defects introduced during low-energy He-ion bombardment of epitaxially grown n-GaAs

Applied Physics Letters

Volumn 68, Issue 23, 1996, Pages 3275-3277

  Auret, F D ^a   Goodman, S A ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001353699     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116572     Document Type: Article

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