Electric field enhanced emission from two alpha-particle irradiation induced traps in n-GaAs

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 1 A, 1996, Pages

  Meyer, Walter E ^a   Auret, Danie F ^a   Goodman, Stewart A ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC FIELD EFFECTS; ELEMENTARY PARTICLES; EPITAXIAL GROWTH; IRRADIATION; PHONONS; SEMICONDUCTOR DOPING; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

ALPHA PARTICLE IRRADIATION; ARRHENIUS PLOTS; EMISSION RATE; POOLE-FRENKEL EFFECT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029733623     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1     Document Type: Article

References (13)