Development of the large area silicon PIN diode with 2 mm-thick depletion layer for hard X-ray detector (HXD) on-board ASTRO-E

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3115, Issue , 1997, Pages 244-253

  Sugizaki, M ^a   Kubo, S ^a   Murakami, T ^a   Ota, N ^a   Ozawa, H ^a   Takahashi, T ^a   Kaneda, H ^a   Iyomoto, N ^a   Kamae, T ^a   Kokubun, M ^a   Kubota, A ^a   Makishima, K ^a   Tamura, T ^a   Tashiro, M ^a   Koyama, K ^a   Tsunemi, H ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

Hard X ray detector; High purity Si material; Large area detector; Silicon PIN diode; X ray astronomy

Indexed keywords

ASTROPHYSICS; CAPACITANCE; ELECTRIC BREAKDOWN; ION IMPLANTATION; LEAKAGE CURRENTS; QUANTUM EFFICIENCY; SATELLITES; SCINTILLATION COUNTERS; SEMICONDUCTOR DIODES; X RAYS;

HARD X-RAY DETECTORS (HXD);

RADIATION DETECTORS;

EID: 0001331405     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.277691     Document Type: Conference Paper

References (10)