Influence of the device geometry and inhomogeneity on the electrostatic discharge sensitivity of InGaAs/InP avalanche photodetectors

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn , Issue , 1997, Pages 18-26

  Neitzert, Heinz Christoph ^a   Cappa, Valeria ^a   Crovato, Rosella ^a  

^a Telecomunicazioni   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC DISCHARGES; ELECTRIC FAULT LOCATION; ELECTROSTATICS; PHOTODETECTORS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SENSITIVITY ANALYSIS;

PHASE CONTRAST IMAGING;

PHOTODIODES;

EID: 0031378241     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/eosesd.1997.634222     Document Type: Conference Paper

References (21)