Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa 1-xAs on GaAs(100)

Applied Physics Letters

Volumn 57, Issue 20, 1990, Pages 2110-2112

  Guha, S ^a   Madhukar, A ^a   Rajkumar, K C ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33746405789     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.103914     Document Type: Article

References (10)

1. Li Chen