Erratum: Negative-effective-mass ballistic field-effect transistor: Theory and modeling (Journal of Applied Physics (2000) 87 (7466) DOI: 10.1063/1.373011);Negative-effective-mass ballistic field-effect transistor: Theory and modeling

Journal of Applied Physics

Volumn 87, Issue 10, 2000, Pages 7466-7475

  Gribnikov, Z S ^a   Vagidov, N Z ^a   Korshak, A N ^a   Mitin, V V ^a  

^a Wayne State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001303689     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.1287735     Document Type: Erratum

References (14)

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