Gated negative-effective-mass ballistic terahertz generators

Applied Physics Letters

Volumn 75, Issue 15, 1999, Pages 2292-2294

  Korshak, A N ^a   Gribnikov, Z S ^a   Vagidov, N Z ^a   Mitin, V V ^a  

^a Wayne State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001565825     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124994     Document Type: Article

References (8)

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5. Yu. M. Sirenko, J. B. Leon, B. C. Lee, K. W. Kim, M. A. Littlejohn, M. A. Stroscio, and G. J. Iafrate, Phys. Rev. B 55, 4360 (1997).
6. G. Bir and G. Pikus, Symmetry and Strain Induced Effects in Semiconductors (Wiley, New York, 1974).
7. D. Xu, T. Suemitsu, J. Osaka, Y. Umeda, Y. Yamane, Y. Ishii, T. Ishii, and T. Tamamura, IEEE Electron Device Lett. 20, 206 (1999).
8. Z. S. Gribnikov and V. B. Zheleznyak, Sov. Phys. Semicond. 25, 9 (1991).