Ion beam etching of GaAs: Influence of etching parameters on the degree of radiation damage

Applied Physics Letters

Volumn 70, Issue 17, 1997, Pages 2297-2299

  Borzenko, T B ^a   Koval, Y I ^a   Kulik, L V ^b   Larionov, A V ^b  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001295095     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118841     Document Type: Article

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