Tunneling emission from valence band of Si-metal-oxide-semiconductor electron tunneling cathode

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 2, 1998, Pages 818-821

  Ikeda, Junji ^a   Yamada, Atsushi ^a   Okamoto, Kazuya ^a   Abe, Yoshiaki ^b   Tahara, Kaoru ^b   Mimura, Hidenori ^b   Yokoo, Kuniyoshi ^b  

^a NIKON CORPORATION   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001274732     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589913     Document Type: Article

References (8)

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7. K. Yokoo et al., J. Vac. Sci. Technol. B 14, 2096 (1996).
8. J. Ikeda et al., Technical Digest of IVMC'97 (1997), p. 593.