Variation of interfacial structure and chemistry of topotactic {111}MgO-Cu interfaces with the oxygen chemical potential

Materials Science Forum

Volumn 294-296, Issue , 1999, Pages 325-328

  Laurent, S ^a   Imhoff, D ^b   Colliex, C ^b   Hytch M J ^a   Devaud, J ^a   Hagege S ^a   Backhaus Ricoult, M ^a  

^a CNRS   (France)

^b UNIVERSITÉ PARIS SUD   (France)

Author keywords

Bonding; Interfacial Electronic States; Metal Oxide Interfaces; MgO Cu; Oxygen Activity Dependency

Indexed keywords

EID: 0001271999     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (11)

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2. R.F. Chen et al , Ultramicroscopy 54 (1994) p 179
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5. D.A. Muller, D.A. Shashkov, R. Benedek, L.H. Yang, J. Silcox, D.N. Seidmann, Phys. Rev. Lett. 80 (1998) p. 4741
6. S. Laurent, D. Imhoff, M. Hÿtch, J. Devaud, S. Hagège, M. Backhaus-Ricoult, Colloque de Métallurgie (1998)
7. D. Imhoff, S. Laurent, C Colliex, M. Backhaus-Ricoult, EJPS (1998) p.
8. M. Hytch, Microsc. Microstr. Microanal. 8 (1997), p.41-57
9. D. Imhoff, S. Laurent, C. Colliex, M. Backhaus-Ricoult, EJPS (1998) p.
10. M. Backhaus-Ricoult, NATO Conf proc. on Materials Joining, Bled (1998)
11. S. Laurent, M. Backhaus-Ricoult, NATO Conf proc. on Materials Joining, ibid Proc. iib (1998)