RHEED investigation of Ge surface segregation during gas source MBE of Si Si1 - xGex heterostructures

Surface Science

Volumn 284, Issue 3, 1993, Pages 305-314

  Ohtani, N ^a   Mokler, S M ^a   Xie, M H ^a   Zhang, J ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRON DIFFRACTION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM; SURFACE PHENOMENA;

GAS SOURCE MOLECULAR BEAM EPITAXY; HETEROSTRUCTURES; SURFACE SEGREGATION;

SEMICONDUCTING SILICON;

EID: 0027553036     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(93)90501-A     Document Type: Article

References (37)

1. Chemical ordering and boundary structure in strained-layer Si-Ge superlattices
2. Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
3. Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb
4. Equilibrium surface hydrogen coverage during silicon epitaxy using SiH4
5. In situ observation of growth rate enhancement during gas source molecular beam epitaxy of Si1−xGex alloys on Si(100) surfaces
6. Growth anisotropy observed on Si(001) surfaces during Si-GSMBE using disilane
7. Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth