253-GHz fmax AlGaAs/GaAs HBT with Ni/Ti/Pt/Ti/Pt-contact and L-shaped base electrode

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 807-810

  Yanagihara, Manabu ^a   Sakai, Hiroyuki ^a   Ota, Yorito ^a   Tanabe, Mitsuru ^a   Inoue, Kaoru ^a   Tamura, Akiyoshi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRODES; NICKEL; OHMIC CONTACTS; PLATINUM; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; TITANIUM;

BASE COLLECTOR CAPACITANCE; BASE RESISTANCE; MAXIMUM OSCILLATION FREQUENCY; OHMIC CONTACT SYSTEM; OPTIMUM ALLOYING TEMPERATURE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029490235     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)