The electrochemical impedance of one-equivalent electrode processes at dark semiconductor/redox electrodes involving charge transfer through surface states. 2. The n-GaAs/Fe3+ system as an experimental example

Journal of Physical Chemistry B

Volumn 103, Issue 1, 1999, Pages 130-138

  Hens, Z ^a,b   Gomes, W P ^a  

^a GHENT UNIVERSITY   (Belgium)

^b RESEARCH FOUNDATION FLANDERS FWO   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001235968     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp9827678     Document Type: Article

References (35)

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20. B indicates the Boltzmann constant, T the absolute temperature, and e the elementary electric charge.
21. Hence, the two current density curves are subtracted at the same band bending for both, not at the same potential.
22. 7
23. Prior to this current step, cathodic potentials more negative than -600 mV vs SCE were avoided except sometimes for a short time during a current-density vs potential measurement.
24. rot stands for the rotation frequency of the disk electrode.
25. 2 with the perfect capacitance obtained in the model of part 1.
26. 1 (Figure 5b). Probably, it is caused by the sudden change from OCP to cathodic polarization. The initial decrease of the reduction current after a potential step is applied to the electrode (cf. section 3.1.) is an analogous manifestation of this effect.
27. -1 and steps of 100 mV every 5 s respectively).
28. 3+ reduction rate at n-GaAs under anodic polarization in the same solution.
29. c.
30. Recombination level using the hole injection terminology.
31. This is valid for hole injection as well.
32. -1.
33. One should remember that this value is indicative since it is obtained by normalization of the constant phase element to an ideal capacitance at a frequency of 1000 Hz (cf. supra).
34. ss.
35. Since the denominator of this partial derivative is strictly positive, only the numerator determines the sign.