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Volumn 17, Issue 2, 1999, Pages 624-629

Processing of porous GaAs at low frequency sparking

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EID: 0001204838     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581629     Document Type: Article
Times cited : (6)

References (18)
  • 4
    • 0029231923 scopus 로고
    • M. H. Ludwig, R. E. Hummel, and M. Stora, Thin Solid Films 255, 103 (1994). See also M. H. Ludwig, R. E. Hummel, and S. S. Chang, J. Vac. Sci. Technol. B 12, 3023 (1994).
    • (1994) Thin Solid Films , vol.255 , pp. 103
    • Ludwig, M.H.1    Hummel, R.E.2    Stora, M.3
  • 9
    • 85034553507 scopus 로고    scopus 로고
    • note
    • + laser radiation at 5145 Å, R=0.35 for GaAs. Therefore, for a spot with d=3 μm, ΔT ≈10°C.
  • 11
    • 0000172277 scopus 로고
    • edited by D. Briggs and M. P. Seah Wiley, New York
    • S. Hofmann, in Practical Surface Analysis, edited by D. Briggs and M. P. Seah (Wiley, New York, 1994), p. 143.
    • (1994) Practical Surface Analysis , pp. 143
    • Hofmann, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.