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Volumn 281-282, Issue 1-2, 1996, Pages 552-555

Micro structure of spark-processed blue luminescent CdTe, GaSb, and InSb

(7) Gudifio Martfnez, A a Falcony, C b Vazquez Lopez C b Navarro, H a Vidai, M A a Araujo Osorio, J c Cabanas Moreno, J G c

a UNIVERSIDAD AUTÓNOMA DE SAN LUIS POTOSÍ (Mexico)

b DEPARTAMENTO DE FÍSICA (Mexico)

c INSTITUTO POLITÉCNICO NACIONAL (Mexico)

Author keywords

Luminescence; Porous semiconductors; Spark processed materials

Indexed keywords

APPROXIMATION THEORY; ATOMIC FORCE MICROSCOPY; CRYSTAL MICROSTRUCTURE; ELECTRIC DISCHARGES; MATHEMATICAL MODELS; MORPHOLOGY; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING CADMIUM COMPOUNDS; SINGLE CRYSTALS;

BAND GAP; BLUE LUMINESCENCE; LOW FREQUENCY SPARK DISCHARGES; MASS APPROXIMATION MODEL; PHOTOLUMINESCENCE SPECTROSCOPY; POROUS SEMICONDUCTORS; QUANTUM CONFINEMENT EFFECT; SPARK PROCESSED MATERIALS;

SEMICONDUCTOR MATERIALS;

EID: 0030219404 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/0040-6090(96)08720-2 Document Type: Article

Times cited : (7)

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