Study of Ohmic contact resistance to Ga(1-X)In(X)As/InP composite channel InP high electron mobility transistors for X=35% to X=81%

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 5, 1997, Pages 1773-1774

  Shealy, J B ^a,b   Matloubian, M ^a   Liu, T ^a   Ngo, C ^a  

^a Hughes Aircraft Co   (United States)

^b HUGHES NETWORK SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001188419     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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