Ingaas/inp double channel HEMT on InP

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992

Volumn , Issue , 1992, Pages 14-17

  Enoki, Takatomo ^a   Arai, Kunihiro ^a   Kohzen, Atsuo ^a   Ishii, Yasunobu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; INDIUM ALLOYS; INTEGRATED OPTOELECTRONICS; PIXELS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR ALLOYS;

CHANNEL STRUCTURES; DC AND RF CHARACTERISTICS; DOUBLE CHANNEL; DRIFT VELOCITIES; EFFECTIVE ELECTRONS; HIGH ELECTRIC FIELDS; HIGH ELECTRON MOBILITY; INGAAS/INP;

INDIUM PHOSPHIDE;

EID: 5344221080     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.1992.235699     Document Type: Conference Paper

References (10)

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