Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching

Semiconductors

Volumn 31, Issue 12, 1997, Pages 1221-1224

  Gorbach, T Ya ^a   Svechnikov, S V ^a   Smertenko, P S ^a   Tul'chinskii P G ^a   Bondarenko, A V ^b   Volchek, S A ^b   Dorofeev, A M ^b   Masini, G ^c   Maiello, G ^c   La Monica, S ^c   Ferrari, A ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^c SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001167907     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187297     Document Type: Article

References (13)

1. L. T. Canham, J. Appl. Phys. Lett. 57, 1046 (1990).
2. D. Stievenard and D. Deresmes, J. Appl. Phys. Lett. 67, 1570 (1995).
3. V. P. Bondarenko, E. A. Bondarenko, A. M. Dorofeev, V. A. Samuǐlov, and G. N. Troyanova, Vest. BGU, No. 1, 80 (1995).
4. Z. Chen, T.-Y. Lee, and G. Bosman, J. Appl. Phys. Lett. 76, 2499 (1994).
5. L. T. Canham, MRS Bull. 18(7), 22 (1993).
6. V. P. Bondarenko, V. E. Borisenko, A. M. Dorofeev, A. A. Leshok, and G. N. Troyanova, Zarubzh. Élektron. Tekh., No. 1-3, 41 (1994), 1-3, 41 (1994).
7. A. Loni, A. J. Simons, T. I. Cox, P. D. J. Calcot, and L. T. Canham, Electron. Lett. 31, 1288 (1995).
8. A. N. Zyuganov and S. V. Svechnikov, Injection-Contact Phenomena in Semiconductors [in Russian], Kiev, 1981.
9. E. V. Astrova, S. V. Belov, and A. A. Lebedev, Fiz. Tverd. Tela (St. Petersburg) 38, 702 (1996) [Phys. Solid State 38, 388 (1996)].
10. E. V. Astrova, S. V. Belov, and A. A. Lebedev, Fiz. Tverd. Tela (St. Petersburg) 38, 702 (1996) [Phys. Solid State 38, 388 (1996)].
11. L. A. Golovan', A. V. Zoteev, and P. K. Kashkarov, Pis'ma Zh. Tekh. Fiz. 20, 66 (1994) [Tech. Phys. Lett. 20, 334 (1994)].
12. L. A. Golovan', A. V. Zoteev, and P. K. Kashkarov, Pis'ma Zh. Tekh. Fiz. 20, 66 (1994) [Tech. Phys. Lett. 20, 334 (1994)].
13. V. V. Chistyrakov, Mikroelektronika 24, 143 (1995).