Si/Pd ohmic contact to n-GaP based on the solid phase regrowth principle

Electronics Letters

Volumn 32, Issue 4, 1996, Pages 409-410

  Wang, L C ^a   Park, Moon Ho ^a   Jorge, H A ^a   Tan, I H ^b   Kish, F ^b  

^a TEXAS A AND M UNIVERSITY   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

Ohmic contacts; Semiconductor devices

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; HETEROJUNCTIONS; LATTICE CONSTANTS; OHMIC CONTACTS; PALLADIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SUBSTRATES;

ANNEALING TEMPERATURE; COX-STRACK MEASUREMENT; ELECTRON BEAM EVAPORATOR; LIQUID ENCAPSULATION CZOCHRALSKI METHOD; SOLID PHASE REGROWTH; THERMAL STABILITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 3242830128     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960224     Document Type: Article

References (10)

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