Miniband transport in a semi conductor superlattice with submonol ayer barriers

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 262, Issue 4-5, 1999, Pages 396-401

  Schomburg, E ^a,b   Brandl, S ^b   Renk, K F ^b   Ledentsov, N M ^c   Ustinov, V M ^c   Zhukov, A E ^c   Kovsh, A R ^c   Egorov, A Yu ^c   Kyutt, R N ^c   Volovik, B V ^c   Kop'ev, P S ^c   Alferov, Zh I ^c   Rosenauer, A ^d   Litvinov, D ^d   Gerthsen, D ^d   Pavel'ev, D G ^e   Koschurinov, Y I ^e  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b UNIVERSITY OF REGENSBURG   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

^d UNIVERSITY OF KARLSRUHE   (Germany)

^e LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

68.65. +g; 73.50.Fq; 73.61. r; 85.30.Vw

Indexed keywords

ALUMINUM ARSENIDE; CURRENT VOLTAGE CHARACTERISTICS; ENERGY DISPERSIVE X RAY ANALYSIS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; PHOTOLUMINESCENCE; X RAY DIFFRACTION ANALYSIS;

68.65. +G; 73.50.FQ; 73.61.-R; 85.30.VW; COMPOSITION ANALYSIS; GAAS/ALAS SUPERLATTICE; PHOTOLUMINESCENCE SPECTRUM; SUPERLATTICE PERIODICITY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 0001111664     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0375-9601(99)00612-X     Document Type: Article

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