Alloy scattering in GaAs/AlGaAs quantum well infrared photodetector

Journal of Applied Physics

Volumn 88, Issue 1, 2000, Pages 288-292

  Fu, Y ^a   Willander, M ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001034424     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373655     Document Type: Article

References (28)

1. J. W. Harrison and J. R. Hauser, Phys. Rev. B 13, 5347 (1976), and references therein.
2. A. Chandra and L. F. Eastman, J. Appl. Phys. 51, 2669 (1980).
3. T. Ando, J. Phys. Soc. Jpn. 51, 3900 (1982).
4. P. K. Basu and B. R. Nag, Appl. Phys. Lett. 43, 689 (1993).
5. G. Bastard, Appl. Phys. Lett. 43, 591 (1983); Surf. Sci. 142, 284 (1984).
6. G. Bastard, Appl. Phys. Lett. 43, 591 (1983); Surf. Sci. 142, 284 (1984).
7. W. Walukiewicz, H. E. Ruda, J. Lagowski, and H. C. Gatos, Phys. Rev. B 30, 4571 (1984).
8. F. Bosc, J. Sicart, and J. L. Robert, Semicond. Sci. Technol. 14, 64 (1999).
9. J. R. Watling, A. B. Walker, J. J. Harris, and J. M. Roberts, Semicond. Sci. Technol. 14, 12 (1999).
10. A. Madhukar, "The nature of molecular beam epitaxy and consequences for quantum microstructures," Physics of Quantum Electron Devices, edited by F. Capasso (Springer, Berlin, 1990), Chap. 2, p. 50.
11. Y. Fu and M. Willander, Phys. Rev. B 44, 13631 (1991).
12. J. Cibert and P. M. Petroff, Phys. Rev. B 36, 3243 (1987).
13. J. Werner, E. Kapon, A. C. von Lehmen, R. Bhat, E. Colas, N. G. Stoffel, and S. A. Schwarz, Appl. Phys. Lett. 53, 1693 (1988).
14. B. Elman, E. S. Koteles, P. Melman, and C. A. Armiento, J. Appl. Phys. 66, 2104 (1989).
15. T. Miyazawa, T. Kagawa, H. Iwamura, O. Mikami, and M. Naganuma, Appl. Phys. Lett. 55, 828 (1989).
16. J. S. Major, Jr., D. C. Hall, L. J. Guido, N. Holonyak, Jr., P. Gavrilovic, K. Meehan, J. E. Williams, and W. Stutius, Appl. Phys. Lett. 55, 271 (1989).
17. H. Leier, A. Forchel, G. Horcher, J. Hommel, S. Bayer, H. Rothfritz, G. Weimann, and W. Schlapp, J. Appl. Phys. 67, 1805 (1990).
18. H. H. Tan, J. S. Williams, C. Jagadish, P. T. Burke, and M. Gal, Appl. Phys. Lett. 68, 2401 (1996).
19. G. F. Redinbo, H. G. Craighead, and J. M. Hong, J. Appl. Phys. 74, 3099 (1993).
20. S. Yuan et al., Appl. Phys. Lett. 83, 1305 (1998).
21. J. Y. Chi, X. Wen, E. S. Koteles, and B. Elman, Appl. Phys. Lett. 55, 855 (1989).
22. W. Feng, F. Chen, W. Q. Cheng, Q. Huang, and J. M. Zhou, Appl. Phys. Lett. 71, 1676 (1997).
23. S. M. Khanna, H. C. Liu, P. H. Wilson, L. Li, and M. Buchanan, IEEE Trans. Nucl. Sci. 43, 3012 (1996); L. Li, H. C. Liu, P. H. Wilson, M. Buchanan, and S. M. Khanna, Semicond. Sci. Technol. 12, 947 (1997).
24. S. M. Khanna, H. C. Liu, P. H. Wilson, L. Li, and M. Buchanan, IEEE Trans. Nucl. Sci. 43, 3012 (1996); L. Li, H. C. Liu, P. H. Wilson, M. Buchanan, and S. M. Khanna, Semicond. Sci. Technol. 12, 947 (1997).
25. P. A. Flinn, Phys. Rev. 104, 350 (1956).
26. B. K. Ridley, Quantum Processes in Semiconductors (Clarendon, Oxford, 1988), p. 181.
27. N. Li, Y. Fu, M. Karlsteen, M. Willander, N. Li, X. Q. Liu, X. Z. Yuan, W. Lu, and S. C. Shen, Appl. Phys. Lett. 75, 2238 (1999).
28. N. Li et al., Superlattices Microstruct. 26, 317 (1999).