Proton implantation and rapid thermal annealing effects on GaAs/AlGaAs quantum well infrared photodetectors

Superlattices and Microstructures

Volumn 26, Issue 5, 1999, Pages 317-324

  Li, Na ^a   Li, Ning ^a   Lu, W ^a   Liu, X Q ^a   Yuan, X Z ^a   Li, Z F ^a   Dou, H F ^a   Shen, S C ^a   Fu, Y ^b   Willander, M ^b   Fu, L ^c   Tan, H H ^c   Jagadish, C ^c   Johnston, M B ^d   Gal, M ^d  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^d UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPOSITION EFFECTS; CRYSTAL ATOMIC STRUCTURE; HETEROJUNCTIONS; INTERDIFFUSION (SOLIDS); ION IMPLANTATION; PROTONS; RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

PHOTORESPONSE SPECTRA; PROTON IMPLANTATION;

INFRARED DETECTORS;

EID: 17644432421     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1999.0785     Document Type: Article

References (21)

1. Levine B. F. J. Appl. Phys. 74:1993;R1.
2. Choi K. K. The Physics of Quantum Well Infrared Photodetector. 1997;World Scientific, Singapore.
3. Wan M. F., Ou H. J., Lu W. J. Infrared Millim. Waves. 17:1998;76.
4. Gunapala et al. S. D. IEEE Trans. Electron Devices. 44:1997;51.
5. Liu H. C., LI J., Thompson J. R. IEEE Trans. Electron Devices. 14:1993;566.
6. Elman B., Koteles E. S., Melman P., Armiento C. A. J. Appl. Phys. 66:1989;2104.
7. Tan H. H., Williams J. S., Jagadish C., Burke P. T., Gal M. Appl. Phys. Lett. 68:1996;2401.
8. Yuan S., Kim Y., Jagadish C., Burke P. T., Gal M. Appl. Phys. Lett. 83:1998;1305.
9. Chi J. Y., Wen X., Koteles E. S., Elman B. Appl. Phys. Lett. 55:1989;855.
10. Gavrilovic P., Depoe D. G., Meehan K., Holonyak N. Appl. Phys. Lett. 47:1985;130.
11. Steele A. G., Buchanan M., Liu H. C., Wasilewski Z. R. J. Appl. Phys. 75:1994;8234.
12. Redinbo G. F., Craighead H. G., Hong J. M. Proton implantation intermixing of GaAs/AlGaAs quantum wells. J. Appl. Phys. 74:1993;3099-3102.
13. Feng W., Chen F., Cheng W. Q., Huang Q., Zhou J. M. Influence of growth conditions on Al-Ga interdiffusion in low-temperature grown AlGaAs/GaAs multiple quantum wells. Appl. Phys. Lett. 71:1997;1676-1678.
14. Crank J. The Mathematics of Diffusion. 1956;Clarendon, Oxford.
15. Madelung O. Semiconductors: Group IV Elements and III-V Compounds. 1991;101 Springer-Verlag, Berlin.
16. Fu Y., Chao K. A. Exciton binding energy in GaAs/AlGaAs multiple quantum wells. Phys. Rev. B43:1991;12626-12629.
17. Fu Y., Willander M. Physical Models of Semiconductor Quantum Devices. 1999;Kluwer, Boston, MA. p. 181.
18. Andrews S. R., Miller B. A. Experimental and theoretical studies of the performance of quantum well infrared photodetectors. J. Appl. Phys. 70:1991;993-1003.
19. Whitney R. L., Cuff K. F., Adams F. W. Long wavelength infrared photodetectors based on intersubband transitions in III-V semiconductor quantum wells. Manasreh M. O. Semiconductor Quantum Wells and Superlattices for Long-wavelength Infrared Detectors. 1993;55-108 Artech House, Boston, MA.
20. Levine B. F., Bethea C. G., Hasnain G., Shen V. O., Pelve E., Abbott R. R., Hsieh S. J. High sensitivity low dark current 10 μ m GaAs quantum well infrared photodetector. Appl. Phys. Lett. 56:1990;851-853.
21. Williams G. M., DeWames R. E., Farley C. W., Anderson R. J. Excess tunnel currents in AlGaAs/GaAs multiple quantum well infrared detectors. Appl. Phys. Lett. 60:1992;1324-1326.