SCOPUS 정보 검색 플랫폼

Volumn 42, Issue 1-3, 1996, Pages 105-109

Deposition parameters and surface topography of a-Si:H thin films obtained by the RF glow discharge process

Author keywords

High ion bombardment; RF glow discharge process; Thin films

Indexed keywords

DEPOSITION; GLOW DISCHARGES; ION BOMBARDMENT; MORPHOLOGY; PLASMAS; SUBSTRATES; SURFACE ROUGHNESS; SURFACES; THIN FILMS;

AUTOCOVARIANCE LENGTH; FILM DEPOSITION PROCESS; HYDROGENATED AMORPHOUS SILICON; ROOT MEAN SQUARE ROUGHNESS; SURFACE TOPOGRAPHY;

AMORPHOUS SILICON;

EID: 0001031255 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(96)01690-X Document Type: Article

Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.