Reaction rates for ionized physical vapor deposition modeling from molecular-dynamics calculations: Effect of surface roughness

Physical Review B - Condensed Matter and Materials Physics

Volumn 60, Issue 20, 1999, Pages 14417-14421

  Hansen, U ^a,b   Kersch, A ^c  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001026749     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.14417     Document Type: Article

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