Photoluminescence from GaN implanted with isoelectronic phosphorus and bismuth

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 271-274

  Jadwisienczak, W M ^a   Lozykowski, H J ^a  

^a Ohio University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; BISMUTH; III-V SEMICONDUCTORS; PHOSPHORUS; PHOTOLUMINESCENCE; SAPPHIRE; WIDE BAND GAP SEMICONDUCTORS;

ANNEALING CONDITION; ISOELECTRONIC IMPURITIES; LUMINESCENCE TRANSITIONS; MODULATED STRUCTURES; PHOTOLUMINESCENCE SPECTRUM; POST-IMPLANT ANNEALING; SAPPHIRE SUBSTRATES; WIDE TEMPERATURE RANGES;

GALLIUM NITRIDE;

EID: 7044232458     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711633     Document Type: Conference Paper

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