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Volumn 103, Issue 49, 1999, Pages 10838-10849

Reactions of Etched, Single Crystal (111)B-Oriented InP to Produce Functionalized Surfaces with Low Electrical Defect Densities

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EID: 0000954275     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp992290f     Document Type: Article
Times cited : (20)

References (49)
  • 27
    • 0000503141 scopus 로고
    • Quantification of AES and XPS
    • Briggs, D., Seah, M. P., Eds.; John Wiley & Sons: Chichester
    • Seah, M. P. Quantification of AES and XPS. In Practical Surface Analysis; 2nd ed.; Briggs, D., Seah, M. P., Eds.; John Wiley & Sons: Chichester, 1990; Vol. 1: pp 201-255.
    • (1990) Practical Surface Analysis; 2nd Ed. , vol.1 , pp. 201-255
    • Seah, M.P.1
  • 41
    • 0346995234 scopus 로고
    • Organosilicon Derivatives of Phosphorus, Arsenic, Antimony, and Bismuth
    • Patai, S., Rappoport, Z., Eds.; John Wiley & Sons: Chichester
    • Armitage, D. A. Organosilicon Derivatives of Phosphorus, Arsenic, Antimony, and Bismuth. In The Silicon/Herteroatom Bond; Patai, S., Rappoport, Z., Eds.; John Wiley & Sons: Chichester, 1991.
    • (1991) The Silicon/Herteroatom Bond
    • Armitage, D.A.1
  • 47
    • 0002864418 scopus 로고
    • Chemical Control of Surface and Grain Boundary Recombination in Semiconductors
    • Nozik, A. J., Ed.; American Chemical Society: Washington, DC
    • Heller, A. Chemical Control of Surface and Grain Boundary Recombination in Semiconductors. In Photoeffects at Semiconductor-Electrolyte Interfaces; Nozik, A. J., Ed.; American Chemical Society: Washington, DC, 1981; Vol. 146; pp 57-77.
    • (1981) Photoeffects at Semiconductor-Electrolyte Interfaces , vol.146 , pp. 57-77
    • Heller, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.