General brönsted acid behavior of porous silicon: A mechanistic evaluation of proton-gated quenching of photoemission from oxide-coated porous silicon

Journal of Physical Chemistry B

Volumn 101, Issue 14, 1997, Pages 2702-2708

  Kelly, Michael T ^a   Chun, Jonathan K M ^a   Bocarsly, Andrew B ^a  

^a PRINCETON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000900805     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp962750u     Document Type: Article

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