메뉴 건너뛰기




Volumn 56, Issue 16, 1997, Pages R10028-R10031

Biexcitonic binding energies in the transition regime from three- to two-dimensional semiconductors

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000888982     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.R10028     Document Type: Article
Times cited : (9)

References (26)
  • 22
    • 0039537076 scopus 로고    scopus 로고
    • Since only overlapping parts of the respective inhomogeneous excitonic and biexcitonic transitions interfere with another, the higher energetic part of the excitonic transition does not contribute to the exciton-biexciton beating. See, e.g., B. Bongiovanni, S. Gürtler, A. Mura, F. Quochi, and J. L. Staehli, Semicond. Sci. Technol. 12, 300 (1997), or
    • (1997) Semicond. Sci. Technol. , vol.12 , pp. 300
    • Bongiovanni, B.1    Gürtler, S.2    Mura, A.3    Quochi, F.4    Staehli, J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.