Excitonic trions in undoped GaAs quantum wells

Solid State Communications

Volumn 98, Issue 4, 1996, Pages 287-291

  Phillips, R T ^a   Nixon, G C ^a   Fujita, T ^a,b   Simmons, M Y ^a   Ritchie, D A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

A. quantum wells, semiconductors; D. optical properties; E. luminescence

Indexed keywords

CHARGE CARRIERS; ELECTRONS; FOUR WAVE MIXING; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SPECTROSCOPY;

BIEXCITON RECOMBINATION; DEGENERATE FOUR WAVE MIXING; DIAMAGNETIC SHIFT; ELECTRON HOLE PLASMA; ENERGY LEVEL STRUCTURE; EXCITONIC TRIONS; MAGNETOOPTICAL SPECTROSCOPY; SUPERLINEAR EMISSION VARIATION; THERMAL QUASI EQUILIBRIUM;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030129293     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00069-5     Document Type: Article

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