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Volumn 88, Issue 3, 2000, Pages 1655-1663

Chemical vapor deposition of undoped and in-situ boron-and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure

(5) Pejnefors, J a Zhang, S L a Radamson, H H a Grahn, J V a Ostling M a

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000817022 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.373867 Document Type: Article

Times cited : (21)

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