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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1299-1301

Extremely sharp photoluminescence lines from nitrogen atomic-layer-doped AlGaAs/GaAs single quantum wells

(2) Makimoto, Toshiki a Kobayashi, Naoki a

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

Author keywords

AlGaAs GaAs; Atomic layer doping; Excitons; Isoelectronic traps; MBE; Nitrogen; Photoluminescence; Quantum well

Indexed keywords

ATOMS; EXCITONS; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; NITROGEN; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SUBSTRATES;

ATOMIC LAYER DOPING; EXCITATION POWER DENSITY; FILAMENT TEMPERATURE; ISOELECTRONIC TRAPS; PHOTOLUMINESCENCE MEASUREMENTS; SUBSTRATE TEMPERATURE; TUNGSTEN FILAMENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030080296 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.1299 Document Type: Article

Times cited : (8)

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