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Volumn 68, Issue 17, 1996, Pages 2447-2449

Conductive thin films of bis(ethylenedithio)tetrathiafulvalene salt fabricated by a successive dry-wet process

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EID: 0000761963     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116163     Document Type: Article
Times cited : (8)

References (35)
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    • A type of substrate that has a layer of chromium, 10 nm in thickness underneath the gold layer, was also used.
    • A type of substrate that has a layer of chromium, 10 nm in thickness underneath the gold layer, was also used.
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    • 2 mm, which are attributable to carbonized portions on the surface of the film by the differential interference microscopy.
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    • On the other hand, samples of doping fronts which do not meet between electrodes were insulative.
    • On the other hand, samples of doping fronts which do not meet between electrodes were insulative.
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    • X-ray powder diffraction method was used to investigate the ordering of the as-deposited and the doped films; no distinct peaks were observed.
    • X-ray powder diffraction method was used to investigate the ordering of the as-deposited and the doped films; no distinct peaks were observed.


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