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Brunner, K.1
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Tränkle, G.6
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See, e.g., K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, and G. Weimann, Phys. Rev. Lett. 69, 3216 (1992); J.-Y. Marzin, J.-M. Gérard, A. Izraël, D. Barrier, and G. Bastard, Phys. Rev. Lett. 73, 716 (1994); Refs. in: U. Hohenester, F. Rossi, and E. Molinari, Solid State Commun. 111, 187 (1999).
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Marzin, J.-Y.1
Gérard, J.-M.2
Izraël, A.3
Barrier, D.4
Bastard, G.5
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See, e.g., K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, and G. Weimann, Phys. Rev. Lett. 69, 3216 (1992); J.-Y. Marzin, J.-M. Gérard, A. Izraël, D. Barrier, and G. Bastard, Phys. Rev. Lett. 73, 716 (1994); Refs. in: U. Hohenester, F. Rossi, and E. Molinari, Solid State Commun. 111, 187 (1999).
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Katzer, D.S.4
Park, D.5
Steel, D.G.6
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N. H. Bonadeo, J. Erland, D. Gammon, D. S. Katzer, D. Park, and D. G. Steel, Science 282, 1473 (1998); Y. Toda, T. Sugimoto, M. Nishioka, and Y. Arakawa, Appl. Phys. Lett. 76, 3887 (2000).
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A. Hartmann, Y. Ducommun, E. Kapon, U. Hohenester, and E. Molinari, Phys. Rev. Lett. 84, 5648 (2000); R. Rinaldi, S. Antonaci, M. DeVittorio, R. Cingolani, U. Hohenester, E. Molinari, H. Lipsanen, and J. Tulkki, Phys. Rev. B 62, 1592 (2000).
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Lipsanen, H.7
Tulkki, J.8
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16
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0041952429
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note
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0 = 5 meV for holes (with this choice, electron and hole wave functions have the same lateral extension); we use material parameters for GaAs/AlGaAs.
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-
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17
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3643120476
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For experimental realization of charge-tunable InGaAs quantum dots see, e.g., H. Drexler, D. Leonard, W. Hansen, J. P. Kotthaus, and P. M. Petroff, Phys. Rev. Lett. 73, 2252 (1994).
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Drexler, H.1
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Hansen, W.3
Kotthaus, J.P.4
Petroff, P.M.5
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20
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33744677520
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(in press). For simplicity we do not consider electron-hole exchange interactions
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Details of our numerical approach can be found in: U. Hohenester and E. Molinari, Phys. Status Solidi B (in press). For simplicity we do not consider electron-hole exchange interactions.
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Phys. Status Solidi B
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Hohenester, U.1
Molinari, E.2
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