Manipulation of final state population in semiconductor heterostructures by pulsed laser fields

Applied Physics Letters

Volumn 71, Issue 3, 1997, Pages 395-397

  Potz W ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON ABSORPTION; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; EXCITONS; HETEROJUNCTIONS; MICROWAVES; OPTICAL VARIABLES CONTROL; SEMICONDUCTING GALLIUM ARSENIDE;

ABSORPTION MODULATION; ELECTRON INTERSUBBAND TRANSITIONS; FANO INTERFERENCE; FINAL STATE POPULATION; SUBPICOSECOND PUMP PULSE;

PULSED LASER APPLICATIONS;

EID: 0031187597     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119548     Document Type: Article

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