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Volumn 9, Issue 3, 1997, Pages 796-806

Volatility Studies on Gallium Chalcogenide Cubanes: Thermal Analysis and Determination of Sublimation Enthalpies

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EID: 0000643007     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm960485j     Document Type: Article
Times cited : (53)

References (89)
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    • FETISH = field effect transistor with insulating sulfide heterojunction
    • FETISH = field effect transistor with insulating sulfide heterojunction.
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    • 4 during MOCVD growth (225 °C).
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    • Non Si unit. Torr = 1 mmHg = 133.322 Pa.
    • Non Si unit. Torr = 1 mmHg = 133.322 Pa.
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    • submitted for publication
    • Vacuum sublimation enables these less stable cubanes to be used as precursors in the MOCVD of GaTe films: Gillan, E. G.; Barron, A. R., submitted for publication.
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    • 4 (22% of total).
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    • sub) versus 1/T plot.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.