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1
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0003494870
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Academic Press: New York
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For background on thin-film processes, see: (a) Thin film Processes; Vossen, J. L., Kern, W., Eds.; Academic Press: New York, 1978. (b) Thin Film Processes II; Vossen, J. L., Kern, W., Eds.; Academic Press: New York, 1978.
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(1978)
Thin Film Processes
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Vossen, J.L.1
Kern, W.2
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2
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0003494876
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Academic Press: New York
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For background on thin-film processes, see: (a) Thin film Processes; Vossen, J. L., Kern, W., Eds.; Academic Press: New York, 1978. (b) Thin Film Processes II; Vossen, J. L., Kern, W., Eds.; Academic Press: New York, 1978.
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Thin Film Processes II
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Vossen, J.L.1
Kern, W.2
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3
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2542609309
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VCH: New York
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For general background, see: (a) CVD of Metals; Kodas, T., Hampden-Smith, M., Eds.; VCH: New York, 1994. (b) CVD of Non-Metals; Rees, Jr., W. S., Ed.; VCH: New York, 1996.
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(1994)
CVD of Metals
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Kodas, T.1
Hampden-Smith, M.2
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4
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0004233827
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VCH: New York
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For general background, see: (a) CVD of Metals; Kodas, T., Hampden-Smith, M., Eds.; VCH: New York, 1994. (b) CVD of Non-Metals; Rees, Jr., W. S., Ed.; VCH: New York, 1996.
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(1996)
CVD of Non-Metals
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Rees Jr., W.S.1
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5
-
-
85033130829
-
-
note
-
While researchers have commonly correlated thermally sensitive substrates with those of low melting points or phase transitions, it should be noted that in most practical applications, proclusion of doping redistribution and the stability of heterojunctions within the substrate are actually more prevalent issues that require low-temperature film growth.
-
-
-
-
7
-
-
85033143216
-
-
note
-
It must be stressed that while the achievement of an optimum vapor pressure for efficient utilization as an industrially practicable source providing high film growth rates (> 10 Torr at 25 °C) is a worthy goal, the usable pressure regimes are those in which evaluation can be carried out on compounds which exhibit vapor pressures exceeding 1 Torr at 100 °C.
-
-
-
-
8
-
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0029344922
-
-
See for example: (a) Pluym, T. C.; Kodas, T. T.; Wang, L.-M.; Glicksman, H. D. J. Mater. Res. 1995, 10, 1661. (b) Milosevic, O.; Jordovic, B.; Uskokovic, D. Mater. Lett. 1994, 19, 165. (c) Gonzalez-Carreno, T.; Morales, M. P.; Gracia, M.; Serna C. J. Mater. Lett. 1993, 18, 151.
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J. Mater. Res.
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Pluym, T.C.1
Kodas, T.T.2
Wang, L.-M.3
Glicksman, H.D.4
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9
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0028416755
-
-
See for example: (a) Pluym, T. C.; Kodas, T. T.; Wang, L.-M.; Glicksman, H. D. J. Mater. Res. 1995, 10, 1661. (b) Milosevic, O.; Jordovic, B.; Uskokovic, D. Mater. Lett. 1994, 19, 165. (c) Gonzalez-Carreno, T.; Morales, M. P.; Gracia, M.; Serna C. J. Mater. Lett. 1993, 18, 151.
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(1994)
Mater. Lett.
, vol.19
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Milosevic, O.1
Jordovic, B.2
Uskokovic, D.3
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10
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0027797716
-
-
See for example: (a) Pluym, T. C.; Kodas, T. T.; Wang, L.-M.; Glicksman, H. D. J. Mater. Res. 1995, 10, 1661. (b) Milosevic, O.; Jordovic, B.; Uskokovic, D. Mater. Lett. 1994, 19, 165. (c) Gonzalez-Carreno, T.; Morales, M. P.; Gracia, M.; Serna C. J. Mater. Lett. 1993, 18, 151.
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(1993)
Mater. Lett.
, vol.18
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Gonzalez-Carreno, T.1
Morales, M.P.2
Gracia, M.3
Serna, C.J.4
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11
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0000825279
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See for example: (a) Xu, C.; Hampden-Smith, M. J.; Kodas, T. T. Chem. Mater. 1995, 7, 1539. (b) Gysling, H. J.; Wernberg, A. A.; Blanton, T. N. Chem. Mater. 1992, 4, 900. (c) Wernberg, A. A.; Gysling, H. J. Chem. Mater. 1993, 5, 1056.
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Chem. Mater.
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Xu, C.1
Hampden-Smith, M.J.2
Kodas, T.T.3
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33751391491
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See for example: (a) Xu, C.; Hampden-Smith, M. J.; Kodas, T. T. Chem. Mater. 1995, 7, 1539. (b) Gysling, H. J.; Wernberg, A. A.; Blanton, T. N. Chem. Mater. 1992, 4, 900. (c) Wernberg, A. A.; Gysling, H. J. Chem. Mater. 1993, 5, 1056.
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Chem. Mater.
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Gysling, H.J.1
Wernberg, A.A.2
Blanton, T.N.3
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25044462279
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See for example: (a) Xu, C.; Hampden-Smith, M. J.; Kodas, T. T. Chem. Mater. 1995, 7, 1539. (b) Gysling, H. J.; Wernberg, A. A.; Blanton, T. N. Chem. Mater. 1992, 4, 900. (c) Wernberg, A. A.; Gysling, H. J. Chem. Mater. 1993, 5, 1056.
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Chem. Mater.
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Wernberg, A.A.1
Gysling, H.J.2
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0001097756
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See for example: (a) Purdy, A. P.; Berry, A. D.; Holm, R. T.; Fatemi, M.; Gaskill, D. K. Inorg. Chem. 1989, 28, 2799. (b) Thompson, S. C.; Cole-Hamilton, D. J.; Gilliland, D. D.; Hitchman M. L.; Barnes, J. C. Adv. Mater. Opt. Electron. 1992, 1, 81. (c) Belcher, R.; Cranley, C. R.; Majer, J. R.; Stephen W. I.; Uden, P. C. Anal. Chim. Acta 1972, 60, 109.
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Gaskill, D.K.5
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84984153792
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See for example: (a) Purdy, A. P.; Berry, A. D.; Holm, R. T.; Fatemi, M.; Gaskill, D. K. Inorg. Chem. 1989, 28, 2799. (b) Thompson, S. C.; Cole-Hamilton, D. J.; Gilliland, D. D.; Hitchman M. L.; Barnes, J. C. Adv. Mater. Opt. Electron. 1992, 1, 81. (c) Belcher, R.; Cranley, C. R.; Majer, J. R.; Stephen W. I.; Uden, P. C. Anal. Chim. Acta 1972, 60, 109.
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Gilliland, D.D.3
Hitchman, M.L.4
Barnes, J.C.5
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See for example: (a) Purdy, A. P.; Berry, A. D.; Holm, R. T.; Fatemi, M.; Gaskill, D. K. Inorg. Chem. 1989, 28, 2799. (b) Thompson, S. C.; Cole-Hamilton, D. J.; Gilliland, D. D.; Hitchman M. L.; Barnes, J. C. Adv. Mater. Opt. Electron. 1992, 1, 81. (c) Belcher, R.; Cranley, C. R.; Majer, J. R.; Stephen W. I.; Uden, P. C. Anal. Chim. Acta 1972, 60, 109.
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Uden, P.C.5
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See for example: (a) Burkley, D. J.; Hanusa, T. P.; Huffman, J. C. Adv. Mater. Opt. Electron. 1994, 4, 1. (b) Williams, R. A.; Tesh, K. F.; Hanusa, T. P. J. Am. Chem. Soc. 1991, 113, 4843. (c) Williams, R. A.; Hanusa, T. P.; Huffman, J. C. Organometallics 1990, 9, 1128. (d) Hanusa, T. P. Polyhedron 1990, 9, 1345. (e) Burns, C. J.; Andersen, R. A. J. Organomet. Chem. 1987, 325, 31.
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Hanusa, T.P.2
Huffman, J.C.3
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See for example: (a) Burkley, D. J.; Hanusa, T. P.; Huffman, J. C. Adv. Mater. Opt. Electron. 1994, 4, 1. (b) Williams, R. A.; Tesh, K. F.; Hanusa, T. P. J. Am. Chem. Soc. 1991, 113, 4843. (c) Williams, R. A.; Hanusa, T. P.; Huffman, J. C. Organometallics 1990, 9, 1128. (d) Hanusa, T. P. Polyhedron 1990, 9, 1345. (e) Burns, C. J.; Andersen, R. A. J. Organomet. Chem. 1987, 325, 31.
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Williams, R.A.1
Tesh, K.F.2
Hanusa, T.P.3
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See for example: (a) Burkley, D. J.; Hanusa, T. P.; Huffman, J. C. Adv. Mater. Opt. Electron. 1994, 4, 1. (b) Williams, R. A.; Tesh, K. F.; Hanusa, T. P. J. Am. Chem. Soc. 1991, 113, 4843. (c) Williams, R. A.; Hanusa, T. P.; Huffman, J. C. Organometallics 1990, 9, 1128. (d) Hanusa, T. P. Polyhedron 1990, 9, 1345. (e) Burns, C. J.; Andersen, R. A. J. Organomet. Chem. 1987, 325, 31.
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(1990)
Organometallics
, vol.9
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Williams, R.A.1
Hanusa, T.P.2
Huffman, J.C.3
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21
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See for example: (a) Burkley, D. J.; Hanusa, T. P.; Huffman, J. C. Adv. Mater. Opt. Electron. 1994, 4, 1. (b) Williams, R. A.; Tesh, K. F.; Hanusa, T. P. J. Am. Chem. Soc. 1991, 113, 4843. (c) Williams, R. A.; Hanusa, T. P.; Huffman, J. C. Organometallics 1990, 9, 1128. (d) Hanusa, T. P. Polyhedron 1990, 9, 1345. (e) Burns, C. J.; Andersen, R. A. J. Organomet. Chem. 1987, 325, 31.
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Polyhedron
, vol.9
, pp. 1345
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Hanusa, T.P.1
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Andersen, R.A.2
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Zisk, M.6
Collman, J.7
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See for example: (a) Rees, Jr., W. S.; Caballero, C. R.; Hesse, W. Angew. Chem. 1992, 104, 786. (b) Rees, Jr., W. S.; Moreno, D. A. J. Chem. Soc., Chem. Commun. 1991, 1759. (c) Rees, Jr., W. S.; Dippel K. A. In Ultrastructure Processing of Ceramics, Glasses, Composites, Ordered Polymers, and Advanced Optical Materials, V; Hench, L. L., West J. K., Ulrich, D. R., Eds.; Wiley and Sons: New York, 1992; p 327. (d) Rees, Jr., W. S.; Dippel K. A. Org. Prepr. Proc. Intl. 1992, 24, 531.
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See for example: (a) Rees, Jr., W. S.; Caballero, C. R.; Hesse, W. Angew. Chem. 1992, 104, 786. (b) Rees, Jr., W. S.; Moreno, D. A. J. Chem. Soc., Chem. Commun. 1991, 1759. (c) Rees, Jr., W. S.; Dippel K. A. In Ultrastructure Processing of Ceramics, Glasses, Composites, Ordered Polymers, and Advanced Optical Materials, V; Hench, L. L., West J. K., Ulrich, D. R., Eds.; Wiley and Sons: New York, 1992; p 327. (d) Rees, Jr., W. S.; Dippel K. A. Org. Prepr. Proc. Intl. 1992, 24, 531.
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Ultrastructure Processing of Ceramics, Glasses, Composites, Ordered Polymers, and Advanced Optical Materials, V
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Dippel, K.A.2
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43
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85033141955
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FETISH = field effect transistor with insulating sulfide heterojunction
-
FETISH = field effect transistor with insulating sulfide heterojunction.
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-
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44
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0000429810
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Power, M. B.; Ziller, J. W.; Barron, A. R. Organometallics 1992, 11, 2783.
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85033147086
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note
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4 during MOCVD growth (225 °C).
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47
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0029774666
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Gillan, E. G.; Bott, S. G.; Barron, A. R. Mater. Res. Soc., Symp. Proc. 1996, 415, 87.
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Sibilia, J. P., Ed.; VCH: New York, Chapter 9
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85033139512
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Non Si unit. Torr = 1 mmHg = 133.322 Pa.
-
Non Si unit. Torr = 1 mmHg = 133.322 Pa.
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85033149850
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submitted for publication
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Vacuum sublimation enables these less stable cubanes to be used as precursors in the MOCVD of GaTe films: Gillan, E. G.; Barron, A. R., submitted for publication.
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See for example: (a) Weaver, D. L. Inorg. Chem. 1970, 9, 2250. (b) Hitchcock, P. B.; Lappert, M. L.; Pye, P. L.; Thomas, S. J. Chem. Soc., Dalton Trans. 1979, 1929. (c) Bianchini, C.; Ghilardi, C. A.; Meli, A.; Midollini, S.; Orlandini, A. Organometallics 1982, 1, 778. (d) Overbosch, P.; van Koten, G.; Grove, D. M.; Spek, A. L.; Duisenberg, A. J. M. Inorg. Chem. 1982, 9, 21. (e) Burgess, K.; Johnson, B. J. G.; Kaner, D. A.; Lewis, J.; Raithby, P. R.; Azman, S. N.; Syed-Mustaffa, B. J. Chem. Soc., Chem. Commun. 1983, 455. (f) Usón, R.; Fornién, J.; Navarro, R.; Usón, M.; Garcia, M. P.; Welch, A. J. J. Chem. Soc., Dalton Trans. 1984, 345. (g) Peng, W.-J.; Bleeke, J. R. Organometallics 1987, 6, 1576.
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