Investigation of a buried double p-n junction structure implemented in CMOS technology for wavelength-sensitive detection

International Journal of Electronics

Volumn 83, Issue 3, 1997, Pages 307-316

  Lu, G N ^a   Chouikha, M Ben ^a   Sedjil, M ^a   Sou, G ^a   Alquie, G ^a  

^a SORBONNE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000631804     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/002072197135382     Document Type: Article

References (5)

1. Dash, W. C., and Newman, R., 1955, Intrinsic optical absorption in single-crystal germanium and silicon at 77°K and 300°K. Physical Review, 99, 1151-1155.
2. Geist, J., Migdall, A., and Baites, H.-P., 1988, Analytic representation of the silicon absorption coefficient in the indirect transition region. Applied Optics, 27, 3777-3779.
3. Huen, T, 1979, Reflectance of thinly oxidised silicon at normal incidence. Applied Optics, 18, 1927-1932.
4. Lu, G. N., Chouikha, M. B., Sou, G., and Sedjil, M., 1996, Colour detection using a buried double p-n junction structure implemented in the CMOS process. Electronics Letters, 32, 594-596.
5. Rajkanan, K., Singh, R., and Shewchun, J., 1979, Absorption coefficient of silicon for solar cell calculations. Solid-state Electronics, 22, 793-795.