Colour detection using a buried double p-n junction structure implemented in the CMOS process

Electronics Letters

Volumn 32, Issue 6, 1996, Pages 594-596

  Lu, G N ^a   Chouikha, M B ^a   Sou, G ^a   Sedjil, M ^a  

^a SORBONNE UNIVERSITÉ   (France)

Author keywords

Semiconductor devices; Sensors

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUIT TESTING; LIGHT ABSORPTION; LIGHT EMITTING DIODES; LIGHT SOURCES; MATHEMATICAL MODELS; MONOCHROMATORS; OPTICAL SENSORS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES;

BURIED DOUBLE JUNCTION STRUCTURE; MONOCHROMATIC COLOUR DETECTION; SURFACE PASSIVATION; WAVELENGTH DEPENDENT PHOTOCURRENT;

SEMICONDUCTOR JUNCTIONS;

EID: 0030106701     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960337     Document Type: Article

References (3)

1. SANSEN, W.: 'Future developments in sensors and actuators'. 5th Eurochip workshop on VLSI design training, Dresden, Germany, 1994, pp. 208-217
2. DASH, W.C., and NEWMAN, R.: 'Intrinsic optical absorption in single-cristal germamium and silicon at 77°K and 300°K', Phys. Rev., 1955, 99, pp. 1151-1155
3. GEIST, J., MIGDALL, A., and BAITES, H.-P.: 'Analytic representation of the silicon absorption coefficient in the indirect transition region', Appl. Opt., 1988, 27, (18), pp. 3777-3779