Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs double barrier diodes

Journal of Applied Physics

Volumn 84, Issue 3, 1998, Pages 1460-1466

  Kitabayashi, Hiroto ^a   Waho, Takao ^a   Yamamoto, Masafumi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000620471     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368208     Document Type: Article

References (19)

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